Metalorganic chemical vapor deposition growth and thermal stability of the AlInN/GaN high electron mobility transistor structure

InGaN channel high electron mobility transistor structures grown by metal organic chemical vapor deposition

High electron mobility transistor (HEMT) structures of AlInGaN/AlN/InGaN/GaN were grown by metal-organic chemical vapor deposition. A combination of low growth rate and high growth temperature during synthesis of the InGaN channel layer led to significant improvement in HEMT electron transport properties. The improvement was correlated with an evolution of both surface roughness and photolumine...

Thermal Stability of Plasma-enhanced chemical vapor deposition Silicon Nitride Passivation on AlGaN/GaN High-electron-mobility transistors

Growth of carbon nanostructures upon stainless steel and brass by thermal chemical vapor deposition method

The lack of complete understanding of the substrate effects on carbon nanotubes (CNTs) growth poses a lot oftechnical challenges. Here, we report the direct growth of nanostructures such as the CNTs on stainless steel 304and brass substrates using thermal chemical vapor deposition (TCVD) process with C2H2 gas as carbon sourceand hydrogen as supporting gas mixed in Ar gas flow. We used an especi...

METALORGANIC CHEMICAL VAPOR DEPOSITION AND INVESTIGATION OF ALGAINN MICROSTRUCTURE by

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Metalorganic chemical vapor deposition of InGaAsN using dilute nitrogen trifluoride

The metalorganic chemical vapor deposition of In0.06Ga0.94As1 xNx, with x 1⁄4 0.00–0.02, has been examined using nitrogen trifluoride (NF3) and tertiarybutylarsine. The solid N/V ratio increased linearly with the gas-phase N/V ratio up to a limit of 2.0% nitrogen in the film at a gas N/V 1⁄4 0.35. No further increase in nitrogen content could be achieved at a growth temperature of 550 1C unless...